Mosaic Defects of AlN Buffer Layers in GaN/AlN/4H-SiC Epitaxial Structure

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers

In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (BPDs) and crystalline quality. It is found that morphological defects reduce with the decreasing ...

Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.

A strong substrate-graphite bond is found in the first all-carbon layer by density functional theory calculations and x-ray diffraction for few graphene layers grown epitaxially on SiC. This first layer is devoid of graphene electronic properties and acts as a buffer layer. The graphene nature of the film is recovered by the second carbon layer grown on both the (0001) and (0001[over]) 4H-SiC s...

Chemically resolved interface structure of epitaxial graphene on SiC(0001).

Atomic-layer 2D crystals have unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the interface strongly influences the electronic properties of the overlaying graphene. We demonstrate a novel combination of x-ray scattering and spectroscopy for studying the complexities of such a buried interface structure. T...

Optical Investigations of stacking faults in 4H-SiC epitaxial layers: comparison of 3C and 8H polytypes

We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H-SiC matrix. First the concept of low temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of valence band offset, internal polarization field and non homogeneity of t...